Journal article
Comparison of High Resolution Negative Electron Beam Resists
Lab-on-a-Chip, Department of Micro- and Nanotechnology, Technical University of Denmark1
Department of Micro- and Nanotechnology, Technical University of Denmark2
Cell Particle Handling, Department of Micro- and Nanotechnology, Technical University of Denmark3
DTU Danchip, Technical University of Denmark4
Nanoprobes Group, NanoSystemsEngineering Section, Department of Micro- and Nanotechnology, Technical University of Denmark5
NanoSystemsEngineering Section, Department of Micro- and Nanotechnology, Technical University of Denmark6
Nanointegration Group, NanoSystemsEngineering Section, Department of Micro- and Nanotechnology, Technical University of Denmark7
NSE-Optofluidics Group, NanoSystemsEngineering Section, Department of Micro- and Nanotechnology, Technical University of Denmark8
Four high resolution negative electron beam resists are compared: TEBN-1 from Tokuyama Corp. Japan, ma-N 2401XP and mr-L 6000AXP from microresist technology GmbH Germany, and SU-8 2000 series from MicroChem Corp., USA. Narrow linewidth high density patterns are defined by 100 kV electron beam lithography, and the pattern is transferred into silicon by a highly anisotropic SF6/O-2/CHF3 based reactive ion etch process with a selectivity between silicon and the investigated resists of approximately 2.20 nm half-pitch lines and 10 nm lines with a pitch down to 60 nm are written and transferred into silicon. (c) 2006 American Vacuum Society.
| Language: | English |
|---|---|
| Publisher: | American Vacuum Society |
| Year: | 2006 |
| Pages: | 1776-1779 |
| ISSN: | 15208567 , 21662754 and 10711023 |
| Types: | Journal article |
| DOI: | 10.1116/1.2210002 |
| ORCIDs: | Shi, Peixiong , Bøggild, Peter and Kristensen, Anders |
