Journal article
AlGaInAsPSb-based high-speed short-cavity VCSEL with single-mode emission at 1.3μm grown by MOVPE on InP substrate
Walter Schottky Institut, Technische Universitaet Muenchen, 85748 Garching, Germany1
Vertilas GmbH, c/o Gate Garching, 85748 Garching, Germany2
In this paper we present the first InP-based short-cavity Vertical-Cavity Surface-Emitting Laser with an AlGaInAsP/GaInAsP active region and a re-grown and structured GaAs0.51Sb:C/Ga0.47InAs:Si buried tunnel junction (BTJ), which serves as current aperture, grown by LP-MOVPE. We achieved over 1mW single-mode continuous-wave (cw) emission at around 1.3μm wavelength and room-temperature.
The small-signal modulation bandwidth exceeds 7.5GHz, which is appropriate for 10Gb/s data transmission, and the series resistance is as low as 24Ω. The latter value indicates around three times lower dissipated power consumption than comparable MOVPE grown InP-based VCSELs.
Language: | English |
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Year: | 2013 |
Pages: | 217-220 |
ISSN: | 18735002 and 00220248 |
Types: | Journal article |
DOI: | 10.1016/j.jcrysgro.2012.06.051 |