Journal article
Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR
Single-spatial-mode semiconductor vertical-cavity surface-emitting lasers (VCSELs) with a non-planar upper (output) dielectric distributed Bragg reflector (DBR) for the 850 nm spectral region are fabricated. The suggested design provides stable single-mode generation in the entire range of working currents, limited by overheating of the active region.
Devices with intracavity contacts and a comparatively large current-aperture diameter (5–6 μm) exhibit single-mode lasing at a wavelength of 840–845 nm in the continuous-wave mode at room temperature with threshold currents of 1.2–1.3 mA, a differential efficiency of 0.5–0.55 mW mA−1, and anoutput power of up to 2 mW.
Language: | English |
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Publisher: | Springer US |
Year: | 2013 |
Pages: | 993-996 |
ISSN: | 10906479 and 10637826 |
Types: | Journal article |
DOI: | 10.1134/S1063782613070166 |