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Conference paper

Carrier dynamics and gain spectra at room-temperature in epitaxial ZNO thin films

In Proceedings of the 24th International Conference on the Physics of Semiconductors — 1999

By Yu, Ping; Hvam, Jørn Märcher1; Wong, K. S.2; Tang, Z. K.2; Wang, H.2; Wong, G. K. L.2; Kawasaki, M.3; Ohtomo, A.3; Koinuma, H.3

Edited by Gershoni, David4

From

Department of Photonics Engineering, Technical University of Denmark1

Hong Kong University of Science and Technology2

Tokyo Institute of Technology3

Technion-Israel Institute of Technology4

Carrier dynamics of epitaxial ZnO thin film was investigated using a frequency up-conversion tehcnique. At lower carrier densities, the decay time of free exciton recombination was measured to be 24 ps. Rapid decay times of a few picoseconds were observed at higher carrier densities, which show a transition of two dynamic processes.

The comparison of calculated gain spectrum and experimental data gave evidence that the transition is form exciton-exciton scattering to the recombination of electron hole plasma.

Language: English
Publisher: World Scientific
Year: 1999
Proceedings: 24th International Conference on The Physics of Semiconductors
Types: Conference paper
ORCIDs: Hvam, Jørn Märcher

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