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title:Nitrider

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1 Book chapter

Nitrider

Nielsen, Karsten Agersted

Materialebogen — 2008, pp. 626-630

Year: 2008

Language: Danish

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2 Journal article

Injection Molding of Silicon Nitride

Year: 1993

Language: English

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3 Journal article

Photoprotonation of a metal nitride complex

Year: 1993

Language: English

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4 Journal article

Nitride formation by air ignition

transition temperature (Tc) previously found for a niobium-based oxide is 5.5 K. We have reproduced this synthesis, and we conclude from X-ray diffraction, electron microprobe, and magnetic susceptibility studies that the superconducting phase in this product is basically niobium nitride. Ignition of niobium

Year: 1995

Language: English

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5 Conference paper

Silicon Rich Nitride and components

Year: 2001

Language: English

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6 Conference paper

The core electron density of Boron Nitride

Year: 2014

Language: English

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7 Conference paper

Silicon rich nitride thin films and waveguides

Year: 2002

Language: English

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8 PhD Thesis

Quantum Cavity Optomechanics with Phononic Bandgap Shielded Silicon Nitride Membranes

Nielsen, William Hvidtfelt Padkær

The Niels Bohr Institute, Faculty of Science, University of Copenhagen — 2016

this work, we report on the progress of bringing a cavity optomechanicalsystem “up to speed” for the later integration into a hybrid atomic-opticalmechanicalentanglement experiment. The optomechanical system in considerationconsists of a highly stressed stoichiometric silicon-nitride membrane placedbetween

Year: 2016

Language: English

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9 Conference paper

Hot carrier dynamics in nitrogen – rich hafnium nitride thin film

Thapa, Bharat; Dubajic, Milos; Nielsen, Michael P.; Patterson, Robert; Conibeer, Gavin; Shrestha, Santosh

2020 47th Ieee Photovoltaic Specialists Conference (pvsc) — 2020, pp. 0793-0797

Hafnium nitride with rock – salt structure (HfN) is a suitable material for the hot carrier solar cell (HCSC) absorber, primarily due to wide phonon band gap. Nitrogen – rich phase of hafnium nitride crystallizes in cubic Th3P4 structure and is a semiconductor. Here, we have synthesized nitrogen – rich c-Hf3N4 using thermal atomic layer deposition and characterized the hot carrier dynamics with transient absorption (TA) spectroscopy. Fitting of the TA kinetics result in lifetime of the carriers in the order of hundreds of picoseconds. This opens feasibility of nitrogen – rich hafnium nitrid...

Year: 2020

Language: English

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10 Journal article

Deterministic photon source interfaced with a programmable silicon-nitride integrated circuit

We develop a quantum photonic platform that interconnects a high-quality quantum dot single-photon source and a low-loss photonic integrated circuit made in silicon nitride. The platform is characterized and programmed to demonstrate various multiphoton applications, including bosonic suppression

Year: 2023

Language: English

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