Conference paper
Low Noise Bias Current/Voltage References Based on Floating-Gate MOS Transistors
In
Proc. 1st Electronic Circuits and Systems Conference
—
1997, pp. 125-128
Abstract
The exploitation of floating-gate MOS transistors as reference current and voltage sources is investigated. Test structures of common source and common drain floating-gate devices have been implemented in a commercially available 0.8 micron double-poly CMOS process. The measurements performed promise a good maintenance of the operating point of the floating-gate devices.
Examples of utilizing of such bias sources in low-noise sensor preamplifiers are discussed.
| Language: | English |
|---|---|
| Publisher: | Slovak University of Technology |
| Year: | 1997 |
| Pages: | 125-128 |
| Proceedings: | 1st Electronic Circuits and Systems Conference |
| Types: | Conference paper |
