Conference paper
Balanced G-band Gm-boosted frequency doublers in transferred substrate InP HBT technology
In this paper, balanced G-band Gm-boosted frequency doublers in transferred substrate (TS) InP HBT technology are reported for the first time. The Gm-boosted frequency doublers consist of a phase compensated Marchand balun, Gm-boosted doubler stage, and an optional cascode gain stage at the output. The doubler without cascode demonstrates a maximum output power of +4.7 dBm around a narrow frequency range at 200 GHz when driven with an input power of +10 dBm.
A Gm-boosted frequency doubler with cascode demonstrates an output power of +5.4 dBm at 190 GHz when driven with an input power of +11 dBm. The power consumptions of the Gm-boosted frequency doubler without and with cascode are 30.9 mW and 56.4 mW, respectively. The fundamental suppression for both doublers remains better than 17.3 dB over an input frequency range of 75–110 GHz.
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2016 |
| Pages: | 89-92 |
| Proceedings: | 11th European Microwave Integrated Circuit Conference |
| ISBN: | 1467390097 , 2874870447 , 9781467390095 and 9782874870446 |
| Types: | Conference paper |
| DOI: | 10.1109/EuMIC.2016.7777497 |
| ORCIDs: | Johansen, Tom Keinicke |
Frequency doublers G-band Heterojunction bipolar transistor (HBT) InP Millimeter-wave monolithic integrated circuits Transferred substrate
G-band Gm-boosted frequency doublers HBT Heterojunction bipolar transistors III-V semiconductor materials III-V semiconductors Impedance matching Indium phosphide Layout Marchand balun Power generation Substrates baluns frequency 190 GHz frequency 200 GHz frequency 75 GHz to 110 GHz frequency multipliers heterojunction bipolar transistor (HBT) heterojunction bipolar transistors indium compounds millimeter-wave monolithic integrated circuits power 30.9 mW power 56.4 mW power consumption power consumptions transferred substrate
