Journal article
Suppression of sublinearity of light–current curve in 850 nm quantum well laser with asymmetric barrier layers
St. Petersburg Academic University1
RAS - Ioffe Physico Technical Institute2
Department of Photonics Engineering, Technical University of Denmark3
Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark4
Virginia Polytechnic Institute and State University5
Peter the Great St. Petersburg Polytechnic University6
An AlGaAs/GaAs quantum well (QW) laser is fabricated with GaInP and AlGaInAs asymmetric barrier layers (ABLs) and its light–current characteristic (LCC) is compared with that of a reference conventional QW laser without ABLs. It was found that the use of the ABLs suppresses the sublinearity of the LCC at high current densities.
As a result, the maximum lasing power of 9.2 W, being limited by catastrophic optical mirror damage, is achieved at a considerably lower operating current in the laser with ABLs as compared to the reference laser (12.5 against 20.2 A). The ABL effect is associated with the suppression of the parasitic recombination in the optical confinement layer, as con- firmed by a decrease of the intensity of the spontaneous emission from the layer.
| Language: | English |
|---|---|
| Publisher: | IET |
| Year: | 2015 |
| Pages: | 1106-1108 |
| ISSN: | 1350911x and 00135194 |
| Types: | Journal article |
| DOI: | 10.1049/el.2015.1392 |
| ORCIDs: | Semenova, Elizaveta and Yvind, Kresten |
AlGaAs-GaAs AlGaInAs GaInP III-V semiconductors aluminium compounds asymmetric barrier layers catastrophic optical mirror damage current densities current density gallium arsenide gallium compounds indium compounds laser beams light-current characteristic light-current curve maximum lasing power optical confinement layer parasitic recombination power 9.2 W quantum well laser quantum well lasers spontaneous emission sublinearity suppression wavelength 850 nm
