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Conference paper

Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications

In Proceedings of the 8th European Microwave Integrated Circuits Conference — 2013, pp. 280-283
From

Department of Electrical Engineering, Technical University of Denmark1

Electromagnetic Systems, Department of Electrical Engineering, Technical University of Denmark2

Brandenburg University of Technology3

Ferdinand-Braun-Institut4

In this paper, the modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. At first, a direct parameter extraction methodology dedicated to III-V based HBTs is employed to determine the small-signal equivalent circuit parameters from measured S-parameters.

It is shown that the model prediction of measured S-parameters can be improved in the millimeter-wave frequency range by augmenting the small-signal model with a description of AC current crowding. The extracted elements of the small-signal model structure are employed as a starting point for the extraction of a large-signal model.

The developed largesignal model for the TS-HBTs accurately predicts the DC over temperature and small-signal performance over bias as well as the large-signal performance at millimeter-wave frequencies (77 GHz).

Language: English
Publisher: IEEE
Year: 2013
Pages: 280-283
Proceedings: 8th European Microwave Integrated Circuit Conference
ISBN: 1479902667 , 2874870323 , 9781479902668 and 9782874870323
Types: Conference paper
ORCIDs: Johansen, Tom Keinicke

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