Conference paper
Doped silicon plasmonic nanotrench structures for mid-infrared molecular sensing
From
Technical University of Denmark1
Process engineering, National Centre for Nano Fabrication and Characterization, Technical University of Denmark2
National Centre for Nano Fabrication and Characterization, Technical University of Denmark3
Department of Photonics Engineering, Technical University of Denmark4
Metamaterials, Department of Photonics Engineering, Technical University of Denmark5
Abstract
Highly doped silicon can be a plasmonic material with negative permittivity for mid-infrared wavelengths. In such case high aspect ratio plasmonic Si trench structures can enhance sensitivity of molecular detection with mid-infrared absorption spectroscopy.
| Language: | English |
|---|---|
| Year: | 2019 |
| Proceedings: | 9th International Conference on Surface Plasmon Photonics |
| Types: | Conference paper |
| ORCIDs: | Shkondin, Evgeniy , Vertchenko, Larissa , Laurynenka, Andrei and Takayama, Osamu |
