Conference paper
Surface Plasmons on Highly Doped InP
Silicon doped InP is grown by metal-organic vapor phase epitaxy (MOVPE) using optimized growth parameters to achieve high free carrier concentration. Reflectance of the grown sample in mid-IR range is measured using FTIR and the result is used to retrieve the parameters of the dielectric function. The derived dielectric function is used to simulate the excitation of surface plasmons by a diffraction grating made of the grown material.
The grating structure is fabricated using standard nanofabrication techniques. Spectral features from the grating agree well with the simulations and show spp coupling at predicted angles of incidence and wavelengths.
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2016 |
| Pages: | 28-30 |
| Proceedings: | 10th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics |
| ISBN: | 1509017267 , 1509018034 , 9781509017263 and 9781509018031 |
| Types: | Conference paper |
| DOI: | 10.1109/MetaMaterials.2016.7746376 |
| ORCIDs: | Ottaviano, Luisa , Semenova, Elizaveta and Lavrinenko, Andrei |
Diffraction FTIR spectra Fourier transform infrared spectra Gratings III-V semiconductor materials III-V semiconductors InP:Si Indium phosphide MOCVD MOVPE Optical surface waves Plasmons Reflection carrier density dielectric function diffraction grating structure diffraction gratings high free carrier concentration indium compounds metal-organic vapor phase epitaxy mid-IR range optimized growth parameters reflectance reflectivity semiconductor epitaxial layers semiconductor growth silicon surface plasmons vapour phase epitaxial growth
