Integration of carbon nanotubes with semiconductor technology: fabrication of hybrid devices by III–V molecular beam epitaxy

We review a number of essential issues regarding the integration of carbon nanotubes in semiconductor devices for electronics: material compatibility, electrical contacts, functionalities, circuit architectures and reliability. In the second part of the paper, we present our own recent results on incorporation of singlewall nanotubes in III–V semiconductor heterostructures grown by molecular beam epitaxy (MBE).

We demonstrate that singlewall carbon nanotubes can be overgrown using MBE; electrical contacts to the nanotubes are obtained by GaMnAs grown at 250 °C. The resulting devices can exhibit field effect action at room temperature.