Conference paper
High Efficiency Wavelength Conversion of 40 Gbps Signals at 1550 nm in SOI Nano-Rib Waveguides Using p-i-n Diodes
We demonstrate enhancement of FWM wavelength conversion of a 40 Gbps signal in a reverse-biased p-i-n junction silicon waveguide. A conversion efficiency of −4.6 dB enables a conversion power penalty as low as 0.2 dB.
| Language: | English |
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| Publisher: | IEEE |
| Year: | 2013 |
| Pages: | 160-161 |
| Proceedings: | 2013 10th IEEE International Conference on Group IV Photonics |
| ISBN: | 1467358029 , 1467358037 , 1467358045 , 9781467358026 , 9781467358033 and 9781467358040 |
| ISSN: | 1949209x and 19492081 |
| Types: | Conference paper |
| DOI: | 10.1109/Group4.2013.6644420 |
| ORCIDs: | Da Ros, Francesco |
FWM wavelength conversion Optical fiber amplifiers Optical wavelength conversion PIN photodiodes SOI nanorib waveguides Si Silicon Waveguide junctions bit rate 40 Gbit/s conversion efficiency conversion power penalty elemental semiconductors high efficiency wavelength conversion integrated optics integrated optoelectronics nanophotonics optical communication equipment optical waveguides optical wavelength conversion p-i-n diodes reverse-biased p-i-n junction silicon waveguide rib waveguides silicon-on-insulator wavelength 1550 nm
