Conference paper
A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology
This work reports a highly linear and efficient ultra-wideband distributed amplifier in 500 nm transferred-substrate InP DHBT technology. Five unit cells each with a tri-code transistor set provide the ultra-wideband properties of this amplifier. A transistor node of 500 nm is used which has an ft and fmax of 350 and 490 GHz respectively.
The measurements show a small-signal gain of 12 dB with a 3-dB bandwidth of near-DC to 175 GHz. For large signal operation, the circuit reaches a 1-dB output compression point, P1dB, of 8.4 dBm at 150 GHz, a saturated output power of approximately 10 dBm, and an associated maximum PAE of 6 %. This is the best linearity as well as the highest saturated output power and PAE reported at this frequency for DAs.
The circuit consumes 180 mW DC power only.
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2019 |
| Pages: | 1253-1256 |
| Proceedings: | 2019 IEEE MTT-S International Microwave Symposium |
| ISBN: | 1728113091 , 1728113105 , 9781728113098 and 9781728113104 |
| ISSN: | 0149645x and 25767216 |
| Types: | Conference paper |
| DOI: | 10.1109/MWSYM.2019.8700895 |
| ORCIDs: | Johansen, Tom |
