Conference paper · Journal article
Polycrystalline SiC as source material for the growth of fluorescent SiC layers
Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport method.
The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics.
Language: | English |
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Publisher: | Trans Tech Publications Ltd |
Year: | 2012 |
Pages: | 39-42 |
Proceedings: | European Conference on Silicon Carbide and Related Materials (ECSCRM 2012) |
Series: | Materials Science Forum |
ISBN: | 3037856246 , 3038260053 , 9783037856246 and 9783038260059 |
ISSN: | 16629752 and 02555476 |
Types: | Conference paper and Journal article |
DOI: | 10.4028/www.scientific.net/MSF.740-742.39 |
ORCIDs: | Ou, Yiyu and Ou, Haiyan |