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Conference paper

Electrically driven surface plasmon light-emitting diodes

From

Department of Photonics Engineering, Technical University of Denmark1

Diode Lasers and LED Systems, Department of Photonics Engineering, Technical University of Denmark2

Tokyo University of Science3

We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.

Language: English
Year: 2016
Proceedings: 4th International Workshop on LEDs and Solar Applications
Types: Conference paper
ORCIDs: Fadil, Ahmed , Ou, Yiyu and Ou, Haiyan

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