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Conference paper · Journal article

Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates

By Schimmel, S.1; Kaiser, M.2; Hens, P.1; Jokubavicus, V.1; Liljedahl, R.1; Sun, J. W.1; Yakimova, R.1; Ou, Yiyu3,4; Ou, Haiyan3,4; Linnarsson, M. K.5; Wellmann, P.2; Syväjärvi, M.1 ...and 2 more

From

Linköping University1

Friedrich-Alexander University Erlangen-Nürnberg2

Department of Photonics Engineering, Technical University of Denmark3

Diode Lasers and LED Systems, Department of Photonics Engineering, Technical University of Denmark4

KTH Royal Institute of Technology5

Homoepitaxial layers of fluorescent 4H-SiC were grown on 4 degree off-axis substrates by sublimation epitaxy. Luminescence in the green spectral range was obtained by co-doping with nitrogen and boron utilizing donor-acceptor pair luminescence. This concept opens possibilities to explore green light emitting diodes using a new materials platform.

Language: English
Publisher: Trans Tech Publications Ltd
Year: 2012
Pages: 185-188
Proceedings: European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
Series: Materials Science Forum
ISBN: 3037856246 , 3038260053 , 9783037856246 and 9783038260059
ISSN: 16629752 and 02555476
Types: Conference paper and Journal article
DOI: 10.4028/www.scientific.net/MSF.740-742.185
ORCIDs: Ou, Yiyu and Ou, Haiyan
Keywords

Co-Doping Donor-Acceptor Pair Luminescence Fluorescent Silicon Carbide Light Conversion Sublimation Epitaxy

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