Conference paper
Carrier dynamics analysis in metal-semiconductor-metal device for mid-IR silicon photonics
Technical University of Denmark1
Department of Photonics Engineering, Technical University of Denmark2
Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark3
Ultra-fast Optical Communication, Department of Photonics Engineering, Technical University of Denmark4
Centre of Excellence for Silicon Photonics for Optical Communications, Centers, Technical University of Denmark5
A modelling platform for active carrier removal based on metal-semiconductor-metal structure is reported on analysis of carrier dynamics. The analysis reveals electric current hot spots exist in geometric singularities and curly trajectory of carriers should be considered when accurately estimating the effective carrier lifetime.
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2017 |
| Pages: | 73-74 |
| Proceedings: | 2017 IEEE 14th International Conference on Group IV Photonics<br/> |
| ISBN: | 1509065679 , 1509065687 , 1509065695 , 9781509065677 , 9781509065684 and 9781509065691 |
| ISSN: | 1949209x and 19492081 |
| Types: | Conference paper |
| DOI: | 10.1109/GROUP4.2017.8082202 |
| ORCIDs: | Ding, Yunhong , Hu, Hao and Galili, Michael |
Absorption Charge carrier lifetime Electric fields Metals Optical waveguides Silicon Trajectory active carrier removal carrier dynamics analysis carrier lifetime effective carrier lifetime electric current hot spots elemental semiconductors geometric singularities integrated optics metal-semiconductor-metal metal-semiconductor-metal device metal-semiconductor-metal structure metal-semiconductor-metal structures mid-IR silicon photonics modelling platform silicon silicon photonics
