Journal article
On the Recombination Rate of Irradiation-Induced Interstitials and Vacancies
Metal Structures in Four Dimensions, Materials Research Division, Risø National Laboratory for Sustainable Energy, Technical University of Denmark1
Materials Research Division, Risø National Laboratory for Sustainable Energy, Technical University of Denmark2
Risø National Laboratory for Sustainable Energy, Technical University of Denmark3
Nano-Microstructures in Materials, Materials Research Division, Risø National Laboratory for Sustainable Energy, Technical University of Denmark4
The rate of recombination of interstitials and vacancies is described on the basis of theoretically derived recombination cross-sections. The numerical values of these cross-sections are substantially lower than the values normally quoted in the literature. The physical situations behind the simplified recombination models (recombination between nearest-neighbour defects and recombination between defects with common nearest neighbours) and the transition between these situations are described.
The consistency between the recombination term and the other rate-equation terms and the complications arising when interstitials and vacancies have approximately the same mobility are also discussed.
Language: | English |
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Year: | 1980 |
Pages: | 336-342 |
ISSN: | 18734820 and 00223115 |
Types: | Journal article |
DOI: | 10.1016/0022-3115(80)90234-2 |