Journal article
Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates
Department of Photonics Engineering, Technical University of Denmark1
Nano-Microstructures in Materials, Materials Research Division, Risø National Laboratory for Sustainable Energy, Technical University of Denmark2
Materials Research Division, Risø National Laboratory for Sustainable Energy, Technical University of Denmark3
Risø National Laboratory for Sustainable Energy, Technical University of Denmark4
Free-standing nanostructures such as suspended carbon nanotubes, graphene layers, III-V nanorod photonic crystals and three-dimensional structures have recently attracted attention because they could form the basis of devices with unique electronic, optoelectronic and electromechanical characteristics.
Here we report the growth by molecular beam epitaxy of free-standing nanoplates of InAs that are close to being atomically plane. The structural and transport properties of these semiconducting nanoplates have been examined with scanning electron microscopy, transmission electron microscopy, X-ray diffraction and low-temperature electron transport measurements.
The carrier density of the nanoplates can be reduced to zero by applying a voltage to a nearby gate electrode, creating a new type of suspended quantum well that can be used to explore low-dimensional electron transport. The electronic and optical properties of such systems also make them potentially attractive for photovoltaic and sensing applications.
Language: | English |
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Publisher: | Nature Publishing Group UK |
Year: | 2007 |
Pages: | 761-764 |
ISSN: | 17483395 and 17483387 |
Types: | Journal article |
DOI: | 10.1038/nnano.2007.378 |
ORCIDs: | 0009-0007-5838-9046 , 0000-0002-7963-3649 , 0000-0002-4639-5314 and 0000-0001-6149-281X |