Journal article
Specific features of waveguide recombination in laser structures with asymmetric barrier layers
Russian Academy of Sciences1
Department of Photonics Engineering, Technical University of Denmark2
Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark3
Virginia Polytechnic Institute and State University4
Peter the Great St. Petersburg Polytechnic University5
The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm2) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical microscopy.
It is found that the waveguide luminescence in such a laser, which is on the whole less intense as compared to that observed in a similar laser without asymmetric barriers, is non-uniformly distributed in the waveguide, so that the distribution maximum is shifted closer to the p-type cladding layer.
This can be attributed to the ability of the GaInP barrier adjoining the quantum well on the side of the n-type cladding layer to suppress the hole transport.
| Language: | English |
|---|---|
| Publisher: | Pleiades Publishing |
| Year: | 2017 |
| Pages: | 254-259 |
| ISSN: | 10906479 and 10637826 |
| Types: | Journal article |
| DOI: | 10.1134/S1063782617020142 |
| ORCIDs: | Semenova, Elizaveta and Yvind, Kresten |
