Journal article
Low-temperature synthesis of wurtzite ZnS single-crystal nanowire arrays
Key Laboratory of Metastable Materials Science and Technology, Yanshan University, 066004 Qinhuangdao, People's Republic of China1
College of Physics Science and Technology, Hebei University, 071002 Baoding, People's Republic of China2
The synthesis of highly aligned and ordered wurtzite ZnS single-crystal nanowires at low temperatures is crucial for their applications in electronic and optoelectronic nanodevices. In the present study, wurtzite ZnS single-crystal nanowire arrays with a preferred growth along the [110] direction have been successfully prepared at a low temperature of T = 120 °C by employing electrochemical deposition techniques using the alumina template with 40 nm diameter pores.
The microstructure of the ZnS nanowires was characterized by x-ray diffraction and transmission electron microscopy studies. A small deposition current is found to be favourable for the growth of wurtzite ZnS single-crystal nanowires and the cause has been discussed.
Language: | English |
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Year: | 2007 |
Pages: | 115604 |
ISSN: | 13616528 and 09574484 |
Types: | Journal article |
DOI: | 10.1088/0957-4484/18/11/115604 |