Journal article
Air-stable π-conjugated amorphous copolymer field-effect transistors with high mobility of 0.3 cm2/Vs
We have fabricated organic bottom-contact top-gate field-effect transistors with an indenofluorene-phenanthrene co-polymer semiconductor, exhibiting ON/OFF ratio of 10(7) and uncommonly high mobility for an amorphous conjugated polymer of up to 0.3 cm(2)/Vs. Lack of crystallinity in this material is indicated by atomic force microscopy, grazing incidence wide angle X-ray scattering, and differential scanning calorimetry data.
Nevertheless, fitting transistor data to the Gaussian disorder model gives low energetic disorder of sigma = 48 meV and high prefactor mobility mu(0) = 0.67 cm(2)/Vs. The measured transistor mobility is also exceptionally stable in ambient conditions, decreasing only by approximately 15% over two months. (C) 2012 American Institute of Physics
Language: | English |
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Publisher: | American Institute of Physics |
Year: | 2012 |
Pages: | 213305 |
ISSN: | 10773118 and 00036951 |
Types: | Journal article |
DOI: | 10.1063/1.4767921 |
ORCIDs: | Nielsen, Martin Meedom |