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Conference paper

A 300 GHz Active Frequency Tripler in Transferred-Substrate InP DHBT Technology

In Proceedings of the 14th European Microwave Integrated Circuits Conference — 2019, pp. 180-183
From

Department of Electrical Engineering, Technical University of Denmark1

Electromagnetic Systems, Department of Electrical Engineering, Technical University of Denmark2

Ferdinand-Braun-Institut3

This paper presents a monolithic integrated active frequency tripler implemented in an InP double heterojunction bipolar transistor (DHBT) transferred-substrate (TS) technology. The active tripler is based on a balanced topology with Marchand balun at the input and rat-race hybrid coupler at the output.

Reflector networks are employed to enhanced the third harmonic response. The measured third harmonic output power is -2.4dBm at 267 GHz and -6.2 dBm at 303 GHz. The second harmonic leakage remains 10 dB lower than the third harmonic power over this bandwidth. The DC power consumption of the active tripler is only 37.6 mW at 303 GHz leading to a DC conversion efficiency of 0.64%.

Language: English
Publisher: IEEE
Year: 2019
Pages: 180-183
Proceedings: 14th European Microwave Integrated Circuits ConferenceEuropean Microwave Integrated Circuits Conference
ISBN: 1728107687 , 2874870560 , 9781728107684 and 9782874870569
Types: Conference paper
DOI: 10.23919/eumic.2019.8909673
ORCIDs: Johansen, Tom Keinicke

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