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Conference paper

25-Gb/s transmission over 2.5-km SSMF by silicon MRR enhanced 1.55-μm III-V/SOI DML

In Proceedings of 2017 Ieee Photonics Conference — 2017, pp. 357-360
From

Department of Photonics Engineering, Technical University of Denmark1

Ultra-fast Optical Communication, Department of Photonics Engineering, Technical University of Denmark2

Centre of Excellence for Silicon Photonics for Optical Communications, Centers, Technical University of Denmark3

Acreo Swedish ICT AB4

Université de Rennes5

Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark6

III-V Lab7

Commissariat à l’énergie atomique et aux énergies alternatives8

KTH Royal Institute of Technology9

The use of a micro-ring resonator (MRR) to enhance the modulation extinction ratio and dispersion tolerance of a directly modulated laser (DML) is experimentally investigated with a bit rate of 25 Gb/s as proposed for the next generation data center communications. The investigated system combines a 11-GHz 1.55-μm directly modulated hybrid III-V/SOI DFB laser realized by bonding III-V materials (InGaAlAs) on a silicon-on-insulator (SOI) wafer and a silicon MRR also fabricated on SOI.

Such a transmitter enables error-free transmission (BER< 10−9) at 25 Gb/s data rate over 2.5-km SSMF without dispersion compensation nor forward error correction (FEC). As both laser and MRR are fabricated on the SOI platform, they could be combined into a single device with enhanced performance, thus providing a cost-effective transmitter for short reach applications.

Language: English
Publisher: IEEE
Year: 2017
Pages: 357-360
Proceedings: 2017 IEEE 14th International Conference on Group IV Photonics<br/>
ISBN: 1509065776 , 1509065784 , 1509065792 , 9781509065776 , 9781509065783 and 9781509065790
Types: Conference paper
DOI: 10.1109/IPCon.2017.8116138
ORCIDs: Da Ros, Francesco , Ding, Yunhong and Oxenløwe, Leif Katsuo

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