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Conference paper

Comparison of continuum and atomistic methods for the analysis of InAs/GaAs quantum dots

By Barettin, D.1; Pecchia, A.1; Penazzi, G.1; Auf der Maur, Matthias1; Lassen, B.2; Willatzen, M.3; di Carlo, A.1

From

University of Rome Tor Vergata1

University of Southern Denmark2

Department of Photonics Engineering, Technical University of Denmark3

We present a comparison of continuum k · p and atomistic empirical Tight Binding methods for the analysis of the optoelectronic properties of InAs/GaAs quantum dots.

Language: English
Year: 2011
Pages: 177-178
Proceedings: 11th International Conference on Numerical Simulation of Optoelectronic Devices
ISBN: 1612848761 , 1612848788 , 9781612848761 and 9781612848785
ISSN: 21583242 and 21583234
Types: Conference paper
DOI: 10.1109/NUSOD.2011.6041203
Keywords

III-V semiconductors gallium arsenide indium compounds semiconductor quantum dots tight-binding calculations

Other keywords

Adaptive optics Computational modeling Gallium arsenide InAs-GaAs Stationary state Strain Wave functions atomistic methods continuum methods optoelectronic properties quantum dots tight binding methods

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