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Conference paper

High power terahertz induced carrier multiplication in Silicon

From

Teraherts Technologies and Biophotonics, Department of Photonics Engineering, Technical University of Denmark1

Department of Photonics Engineering, Technical University of Denmark2

The application of an intense THz field results a nonlinear transmission in high resistivity silicon. Upon increasing field strength, the transmission falls from 70% to 62% due to carrier generation through THz-induced impact ionization and subsequent absorption of the THz field by free electrons.

Language: English
Publisher: IEEE
Year: 2015
Pages: 1-1
Proceedings: 40th International Conference on Infrared, Millimeter, and Terahertz Waves
ISBN: 1479982717 , 1479982725 , 1479982733 , 9781479982714 , 9781479982721 and 9781479982738
ISSN: 21622027 and 21622035
Types: Conference paper
DOI: 10.1109/IRMMW-THz.2015.7327401
ORCIDs: Pedersen, Pernille Klarskov and Jepsen, Peter Uhd

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