Conference paper
High power terahertz induced carrier multiplication in Silicon
The application of an intense THz field results a nonlinear transmission in high resistivity silicon. Upon increasing field strength, the transmission falls from 70% to 62% due to carrier generation through THz-induced impact ionization and subsequent absorption of the THz field by free electrons.
Language: | English |
---|---|
Publisher: | IEEE |
Year: | 2015 |
Pages: | 1-1 |
Proceedings: | 40th International Conference on Infrared, Millimeter, and Terahertz Waves |
ISBN: | 1479982717 , 1479982725 , 1479982733 , 9781479982714 , 9781479982721 and 9781479982738 |
ISSN: | 21622027 and 21622035 |
Types: | Conference paper |
DOI: | 10.1109/IRMMW-THz.2015.7327401 |
ORCIDs: | Pedersen, Pernille Klarskov and Jepsen, Peter Uhd |