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Conference paper

Competitive capture of photoexcited carriers in a novel step-graded InX(Al0.17Ga0.83)1-XAs quantum well heterostructure

In Conference Proceedings, 2004 International Conference on Indium Phosphide and Related Materials — 2004, pp. 257-260
From

Kyushu Institute of Technology1

Crystal Fibre A/S2

Department of Photonics Engineering, Technical University of Denmark3

Photolumiscence (PL) and PL excitation (PLE) spectra of a novel step-graded strained Inx(Al0.17Ga0.83)1-xAs/Al0.17Ga0.83As multiple-quantum-well heterostructure consisting of five quantum wells with different x values have been investigated. Under indirect barrier excitation conditions a strongly nonuniform PL intensity distribution is observed between the five different wells, while no such difference in PL intensity is found by direct well excitation.

PL enhancement and reduction observed for the different wells at the barrier band edge excitation are explained in terms of competitive capture of carriers from the barrier into the five wells.

Language: English
Year: 2004
Pages: 257-260
Proceedings: 16th International Conference on Indium Phosphide and Related Materials
ISBN: 0780385950 and 9780780385955
Types: Conference paper
ORCIDs: Hvam, Jørn Märcher

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