Conference paper
Physical based Schottky barrier diode modeling for THz applications
In this work, a physical Schottky barrier diode model is presented. The model is based on physical parameters such as anode area, Ohmic contact area, doping profile from epitaxial (EPI) and substrate (SUB) layers, layer thicknesses, barrier height, specific contact resistance, and device temperature.
The effects of barrier height lowering, nonlinear resistance from the EPI layer, and hot electron noise are all included for accurate characterization of the Schottky diode. To verify the diode model, measured I-V and C-V characteristics are compared with the simulation results. Due to the lack of measurement data for noise behaviors, simulated noise temperature is compared with the experimental data found from the open literature.
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2013 |
| Pages: | 1-4 |
| Proceedings: | 2013 IEEE International Wireless Symposium |
| ISBN: | 1467321400 , 1467321419 , 9781467321402 and 9781467321419 |
| Types: | Conference paper |
| DOI: | 10.1109/IEEE-IWS.2013.6616741 |
| ORCIDs: | Michaelsen, Rasmus Schandorph and Johansen, Tom Keinicke |
Barrier height lowering Computing and Processing Hot-electron noise Physical based model Schottky barrier diode
Anodes C-V characteristics Capacitance I-V characteristics Junctions Noise Ohmic contact area Schottky barriers Schottky diodes THz applications Temperature measurement anode area barrier height barrier height lowering contact resistance device temperature doping profile doping profiles epitaxial layers hot carriers hot electron noise hot-electron noise layer thicknesses nonlinear resistance ohmic contacts physical based Schottky barrier diode modeling physical based model semiconductor device models semiconductor epitaxial layers simulated noise temperature specific contact resistance substrate layers
