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Journal article

Investigating the chemical and morphological evolution of GaAs capped InAs/InP quantum dots emitting at 1.5μm using aberration-corrected scanning transmission electron microscopy

By Kadkhodazadeh, Shima1; Semenova, Elizaveta1,2; Yvind, Kresten1,2; Dunin-Borkowski, Rafal E.3

From

Department of Photonics Engineering, Technical University of Denmark1

Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark2

Center for Electron Nanoscopy, Technical University of Denmark3

The emission wavelength of InAs quantum dots grown on InP has been shown to shift to the technologically desirable 1.5μm with the deposition of 1–2 monolayers of GaAs on top of the quantum dots. Here, we use aberration-corrected scanning transmission electron microscopy to investigate morphological and compositional changes occurring to the quantum dots as a result of the deposition of 1.7 monolayers of GaAs on top of them, prior to complete overgrowth with InP.

The results are compared with theoretical models describing the overgrowth process.

Language: English
Year: 2011
Pages: 57-61
ISSN: 18735002 and 00220248
Types: Journal article
DOI: 10.1016/j.jcrysgro.2011.06.037
ORCIDs: Kadkhodazadeh, Shima , Semenova, Elizaveta and Yvind, Kresten
Keywords

A1. Characterisation A1. Nanostructures A1. Scanning transmission electron microscopy A3. Metalorganic vapour-phase epitaxy A3. Quantum dots B2. Semiconducting III/V materials

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