Journal article ยท Preprint article
Scaling theory put into practice: First-principles modeling of transport in doped silicon nanowires
Theoretical Nanoelectronics Group, Theory Section, Department of Micro- and Nanotechnology, Technical University of Denmark1
Theory Section, Department of Micro- and Nanotechnology, Technical University of Denmark2
Department of Micro- and Nanotechnology, Technical University of Denmark3
Autonomous University of Barcelona4
Theoretical Nanotechnology, Department of Micro- and Nanotechnology, Technical University of Denmark5
We combine the ideas of scaling theory and universal conductance fluctuations with density-functional theory to analyze the conductance properties of doped silicon nanowires. Specifically, we study the crossover from ballistic to diffusive transport in boron or phosphorus doped Si nanowires by computing the mean free path, sample-averaged conductance hGi, and sample-to-sample variations stdG as a function of energy, doping density, wire length, and the radial dopant profile.
Our main findings are (i) the main trends can be predicted quantitatively based on the scattering properties of single dopants, (ii) the sample-to-sample fluctuations depend on energy but not on doping density, thereby displaying a degree of universality, and (iii) in the diffusive regime the analytical predictions of the Dorokhov-Mello-Pereyra- Kumar theory are in good agreement with our ab initio calculations.
Language: | English |
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Year: | 2007 |
Pages: | 076803 |
ISSN: | 10797114 and 00319007 |
Types: | Journal article and Preprint article |
DOI: | 10.1103/PhysRevLett.99.076803 |
ORCIDs: | Jauho, Antti-Pekka and Brandbyge, Mads |