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Journal article

Effect of Copper on the Carrier Lifetime in Black Silicon

By Porte, Henrik1,2; Turchinovich, Dmitry2,3; Persheyev, Saydulla4; Fan, Yongchang4; Rose, Mervyn J.4; Jepsen, Peter Uhd1,2

From

Teraherts Technologies and Biophotonics, Department of Photonics Engineering, Technical University of Denmark1

Department of Photonics Engineering, Technical University of Denmark2

Fiber Optics, Devices and Non-linear Effects, Department of Photonics Engineering, Technical University of Denmark3

University of Dundee4

Black silicon is produced by laser annealing of a-Si:H films. During annealing, silicon microstructures are formed on the surface. We use time-resolved terahertz spectroscopy to study the photoconductivity dynamics in black silicon. We find that when a copper film is deposited on top of the a-Si:H layer prior to laser annealing, the carrier lifetime of black silicon is significantly reduced.

Language: English
Publisher: Springer US
Year: 2011
Pages: 883-886
ISSN: 18666906 and 18666892
Types: Journal article
DOI: 10.1007/s10762-011-9801-x
ORCIDs: Jepsen, Peter Uhd
Keywords

Electrical Engineering Electronics and Microelectronics, Instrumentation Engineering Optics and Electrodynamics

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