Query: journal:(APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING) title:(Synthesis of crystalline Ge nanoclusters in PE-CVD-deposited SiO2 films), Author: Leervad Pedersen, ISSN: 09478396

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journal:(APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING) title:(Synthesis of crystalline Ge nanoclusters in PE-CVD-deposited SiO2 films) ISSN: 09478396 Author: Leervad Pedersen

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journal:(APPLIED AND PHYSICS AND A-MATERIALS AND SCIENCE AND PROCESSING) AND title:(Synthesis AND of AND crystalline AND Ge AND nanoclusters AND in AND PE-CVD-deposited AND SiO2 AND films)

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1 Journal article

Synthesis of crystalline Ge nanoclusters in PE-CVD-deposited SiO2 films

Leervad Pedersen, T.P.; Skov Jensen, J.; Chevallier, J.; Jensen, J. M.; Hansen, Ole

Applied Physics A-materials Science and Processing — 2005, Volume 81, Issue 8, pp. 1591-1593

The synthesis of evenly distributed Ge nanoclusters in plasma-enhanced chemical-vapour-deposited (PE-CVD) SiO2 thin films containing 8 at. % Ge is reported. This is of importance for the application of nanoclusters in semiconductor technology. The average diameter of the Ge nanoclusters can

Year: 2005

Language: English

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2 Journal article

Synthesis of crystalline Ge nanoclusters in PE-CVD-deposited SiO2 films 10.1007/s00339-005-3331-0