Journal article · Ahead of Print article
System-Level Sensitivity Analysis of SiNW-bioFET-Based Biosensing Using Lockin Amplification
Department of Management Engineering, Technical University of Denmark1
Engineering Systems, Department of Management Engineering, Technical University of Denmark2
Department of Micro- and Nanotechnology, Technical University of Denmark3
Nano Bio Integrated Systems, Department of Micro- and Nanotechnology, Technical University of Denmark4
Center for Bachelor of Engineering Studies, Technical University of Denmark5
Afdelingen for El-teknologi, Center for Bachelor of Engineering Studies, Technical University of Denmark6
Copenhagen Center for Health Technology, Centers, Technical University of Denmark7
Department of Applied Mathematics and Computer Science, Technical University of Denmark8
Embedded Systems Engineering, Department of Applied Mathematics and Computer Science, Technical University of Denmark9
Although Silicon Nanowire biological Field-Effect Transistors (SiNW-bioFETs) have steadily demonstrated their ability to detect biological markers at ultra-low concentration, they have not yet translated into routine diagnostics applications. One of the challenges inherent to the technology is that it requires an instrumentation capable of recovering ultra-low signal variations from sensors usually designed and operated in a highly-resistive configuration.
Often overlooked, the SiNWbioFET/ instrument interactions are yet critical factors in determining overall system biodetection performances. Here, we carry out for the first time the system-level sensitivity analysis of a generic SiNW-bioFET model coupled to a custom-design instrument based on the lock-in amplifier.
By investigating a large parametric space spanning over both sensor and instrumentation specifications, we demonstrate that systemwide investigations can be instrumental in identifying the design trade-offs that will ensure the lowest Limits-of-Detection. The generic character of our analytical model allows us to elaborate on the most general SiNW-bioFET/instrument interactions and their overall implications on detection performances.
Our model can be adapted to better match specific sensor or instrument designs to either ensure that ultra-high sensitivity SiNW-bioFETs are coupled with an appropriately sensitive and noise-rejecting instrumentation, or to best tailor SiNW-bioFET design to the specifications of an existing instrument.
Language: | English |
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Publisher: | IEEE |
Year: | 2017 |
Pages: | 6295-6311 |
ISSN: | 15581748 , 1530437x and 23799153 |
Types: | Journal article and Ahead of Print article |
DOI: | 10.1109/JSEN.2017.2742018 |
ORCIDs: | Patou, François , Dimaki, Maria , Madsen, Jan and Svendsen, Winnie Edith |