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Conference paper

Binding of quasi two-dimensional biexcitons

In Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference — 1996, pp. 218-219
From

Department of Micro- and Nanotechnology, Technical University of Denmark1

Technical University of Denmark2

Summary form only given. In this presentation we report on a determination of the biexciton binding energies in GaAs-AlGaAs quantum wells of different widths and the results of a theoretical calculation of the ratio of the biexciton binding energy to that of the exciton. We determine the binding energies using spectrally resolved transient four-wave mixing (TFWM) and photoluminescence (PL).

Language: English
Publisher: IEEE
Year: 1996
Pages: 218-219
Proceedings: 1996 Quantum Electronics and Laser Science Conference
ISBN: 1557524440 and 9781557524447
Types: Conference paper
DOI: 10.1109/QELS.1996.865798
ORCIDs: Hvam, Jørn Märcher

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