Journal article
Cryogenic characterization of titanium nitride thin films
Department of Photonics Engineering, Technical University of Denmark1
National Centre for Nano Fabrication and Characterization, Technical University of Denmark2
Process engineering, National Centre for Nano Fabrication and Characterization, Technical University of Denmark3
Metamaterials, Department of Photonics Engineering, Technical University of Denmark4
North Carolina Central University5
It is well known that noble metals are not compatible with silicon fabrication processing due to their low melting point, and that their plasmonic behaviour suffers from the material losses at visible wavelengths. As an alternative, titanium nitride has been highly investigated in order to overcome these challenges.
High temperature characterization of TiN films has been performed, showing its CMOS compatibility; however, information on intrinsic losses at lower temperatures is still lacking. Here we experimentally investigate the optical properties of a 100 nm TiN film under low temperatures down to 1.5 K. From the reflection measurements we retrieve the dielectric constant and analyze plasmonic applications possibilities.
| Language: | English |
|---|---|
| Year: | 2019 |
| Pages: | 2117-2127 |
| ISSN: | 21593930 |
| Types: | Journal article |
| DOI: | 10.1364/OME.9.002117 |
| ORCIDs: | Vertchenko, Larissa , Leandro, Lorenzo , Shkondin, Evgeniy , Takayama, Osamu , Akopian, Nika , Lavrinenko, Andrei V. and 0000-0003-0739-210X |
