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Journal article · Conference paper

Characterization of donor-acceptor-pair emission in fluorescent 6H-SiC

By Ou, Yiyu1,2; Jokubavicius, Valdas3; Linnarsson, Margareta4; Yakimova, Rositza3; Syvajarvi, Mikael3; Ou, Haiyan1,2

From

Department of Photonics Engineering, Technical University of Denmark1

Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark2

Linköping University3

KTH Royal Institute of Technology4

We investigated donor-acceptor-pair emission in N-B-doped 6H-SiC samples by using photoluminescence (PL) and angle-resolved PL. It is shown that n-type doping with concentrations larger than 10(18) cm(-3) is favorable for observing luminescence, and increasing nitrogen results in stronger luminescence.

A dopant concentration difference greater than 4x10(18) cm(-3) is proposed to help achieve intense PL. Angular-dependent PL was observed that was attributed to the Fabry-Perot microcavity interference effect, and a strong luminescence intensity in a large emission angle range was also achieved. The results indicate that N-B-doped fluorescent SiC is a good wavelength converter in white LED applications.

Language: English
Year: 2012
Pages: 014003
Proceedings: 24th Nordic Semiconductor Meeting
ISSN: 00318949 and 14024896
Types: Journal article and Conference paper
DOI: 10.1088/0031-8949/2012/T148/014003
ORCIDs: Ou, Yiyu and Ou, Haiyan
Keywords

Efficiency Luminescence Physics

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