Conference paper
Overcoming doping limits in MOVPE grown n-doped InP for plasmonic applications
Department of Photonics Engineering, Technical University of Denmark1
Metamaterials, Department of Photonics Engineering, Technical University of Denmark2
Structured Electromagnetic Materials, Department of Photonics Engineering, Technical University of Denmark3
Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark4
Effect of the growth parameters on carrier concentration in MOVPE grown silicon-doped InP is studied. The dopant flow, V/III ratio and substrate temperature are optimized by considering the origin of the doping limits. In addition, two different group V precursors, namely PH3 and TBP, are compared. The carrier concentration profile is measured using electrochemical capacitance-voltage (ECV) profilometry and the total concentration of silicon atoms is measured by secondary ion mass spectroscopy (SIMS) in order to evaluate the amount of Si atoms contributing as donors.
The electron concentration about 4×1019cm-3 is achieved. Optical properties of the samples are investigated by Fourier transform infrared reflection (FTIR) spectroscopy and are fitted by a Drude-Lorentz function.
Language: | English |
---|---|
Year: | 2015 |
Proceedings: | 16th European Workshop on Metalorganic Vapour Phase Epitaxy |
Types: | Conference paper |
ORCIDs: | Xiao, Sanshui , Lavrinenko, Andrei and Semenova, Elizaveta |