Journal article
Ultralow-power GaAs MESFET MSI circuits using two-phase dynamic FET logic
Two-phase dynamic FET logic (TDFL) gates are used in GaAs MESFET MSI circuits to implement very low power 4-b ripple carry adders and a variable modulus (2 to 31) prescaler. Operation of the adders is demonstrated at 500 MHz with an associated power dissipation of less than 1.0 mW and at 750 MHz with Pd=1.7 mW.
The prescaler, which contains 166 TDFL gates and 79 static gates, is shown to operate up to 850 MHz with an associated power dissipation of 9.2 mW from its 1.0-V supply. The operation of the adders and prescalers demonstrates the use of three- and four-input TDFL gates and a completely dynamic TDFL XNOR gate.
The TDFL gates in these circuits dissipate only from 14 to 20 nW/MHz
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 1993 |
| Pages: | 1038-1045 |
| ISSN: | 1558173x and 00189200 |
| Types: | Journal article |
| DOI: | 10.1109/4.237519 |
1 V 1 W 1.7 mW 500 MHz 850 MHz 9.2 mW Adders Circuit testing FETs GaAs Gallium arsenide III-V semiconductors Inverters Logic circuits Logic gates MESFET MSI circuits MESFET circuits Power dissipation Power supplies Schottky gate field effect transistors TDFL gates XNOR gate adders carry logic field effect integrated circuits gallium arsenide integrated logic circuits logic gates ripple carry adders scaling circuits static gates two-phase dynamic FET logic ultralow power variable modulus prescaler
