Journal article
Short exciton radiative lifetime in submonolayer InGaAs/GaAs quantum dots
Abstract
The exciton radiative lifetime in submonolayer (SML) InGaAs/GaAs quantum dots (QDs) grown at 500 °C was measured by using time-resolved photoluminescence from 10 to 260 K. The radiative lifetime is around 90 ps and is independent of temperature below 50 K. The observed short radiative lifetime is a key reason for the high performance of SML QD devices and can be explained by the theory of Andreani et al. [Phys.
Rev. B 60, 13276 (1999)] calculating the radiative lifetime of QDs formed at the interface fluctuations of a quantum well, as the SML QDs are 20–30 nm in diameter and embedded within the lateral InGaAs QW.
| Language: | English |
|---|---|
| Publisher: | American Institute of Physics |
| Year: | 2008 |
| ISSN: | 10773118 and 00036951 |
| Types: | Journal article |
| DOI: | 10.1063/1.2839312 |
| ORCIDs: | Hvam, Jørn Märcher |
Keywords
