Journal article
Deep Reactive Ion Etching for High Aspect Ratio Microelectromechanical Components
In
Physica Scripta. Topical Issues
—
2004, Volume T114, pp. 188-192
Abstract
A deep reactive ion etch (DRIE) process for fabrication of high aspect ratio trenches has been developed. Trenches with aspect ratios exceeding 20 and vertical sidewalls with low roughness have been demonstrated. The process has successfully been used in the fabrication of silicon-on-insulator (SOI) released comb drive based resonators and tunable capacitors for MEMS applications.
Brief characterizations of the devices are presented.
| Language: | English |
|---|---|
| Year: | 2004 |
| Pages: | 188-192 |
| ISSN: | 00318949 , 14024896 and 02811847 |
| Types: | Journal article |
| DOI: | 10.1088/0031-8949/2004/T114/047 |
| ORCIDs: | Hansen, Ole |
