Journal article
Determination of crystallization as a function of Mo layer thickness in Mo/Si multilayers
Mo/Si multilayer samples with different Mo layer thickness were deposited by electron beam evaporation, while Kr+ ions (300 eV) were used for polishing the Si layers. Crystallization as a function of the Mo layer thickness deposited was investigated by grazing incidence X-ray diffraction, giving information on the crystalline phases, average size and crystallite formation.
Comparison of these parameters for the samples examined provided novel results, especially regarding the in-plane and in-depth average sizes of the crystallites. The most important result is that crystallization takes place already when a 1 nm thick Mo layer has been deposited. Moreover, the average in-plane size of the crystallites was found to be independent of the layer thickness, while the average in-depth size corresponded to the thickness of the Mo layer.
Depositions consist of polished Si layers were found to give a larger amount of crystalline material compared to those consist of unpolished Si layers.
Language: | English |
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Year: | 2002 |
Pages: | 279-289 |
ISSN: | 18734227 and 00255408 |
Types: | Journal article |
DOI: | 10.1016/S0025-5408(01)00764-4 |