Conference paper · Journal article
Capture and release of carriers in InGaAs/GaAs quantum dots
In
Journal of Physics: Conference Series (online)
—
2009, Volume 193, pp. 012085
Abstract
We observe the ultrafast capture and release of charge carriers in InGaAs/GaAs quantum dots (QDs) at room-temperature with time-resolved terahertz spectroscopy. For excitation into the barrier states, a decay of the photoinduced conductivity, due to capture of carriers into the nonconducting QD states is observed.
The increase of the decay time constant with increasing pump fluence is attributed to filling of the QD states. In the case of resonantly excitation into the QD ground state a maximum conductivity is reached 35 ps after photoexcitation, which is assigned to the release of carriers from the QDs into the wetting layer and barrier states.
| Language: | English |
|---|---|
| Publisher: | IOP Publishing |
| Year: | 2009 |
| Pages: | 012085 |
| Proceedings: | 16th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures |
| ISSN: | 17426596 and 17426588 |
| Types: | Conference paper and Journal article |
| DOI: | 10.1088/1742-6596/193/1/012085 |
| ORCIDs: | Jepsen, Peter Uhd |
