Journal article
Mechanism of single atom switch on silicon
In
Surface Science
—
1998, Volume 415, Issue 3, pp. L1037-L1045
Abstract
We demonstrate single atom switch on silicon which operates by displacement of a hydrogen atom on the silicon (100) surface at room temperature. We find two principal effects by which the switch is controlled: a pronounced maximum of the switching probability as function of sample bias and a preferred direction of switching as function of STM tip position.
Based on first principles calculations, are show that this behaviour is due to a novel mechanism involving an electronic excitation of a localized surface resonance. (C) 1998 Elsevier Science B.V. All rights reserved.
| Language: | English |
|---|---|
| Year: | 1998 |
| Pages: | L1037-L1045 |
| ISSN: | 18792758 and 00396028 |
| Types: | Journal article |
| DOI: | 10.1016/S0039-6028(98)00560-3 |
