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Conference paper

III-V/SOI vertical cavity laser structure for 120 Gbit/s speed

In Integrated Photonics Research, Silicon and Nanophotonics 2015 — 2015

By Park, Gyeong Cheol1,2; Xue, Weiqi1,2; Mørk, Jesper1,2,3; Semenova, Elizaveta1,4; Chung, Il-Sug1,2

From

Department of Photonics Engineering, Technical University of Denmark1

Quantum and Laser Photonics, Department of Photonics Engineering, Technical University of Denmark2

Department of Micro- and Nanotechnology, Technical University of Denmark3

Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark4

Ultrashort-cavity structure for III-V/SOI vertical cavity laser with light output into a Si waveguide is proposed, enabling 17 fJ/bit efficiency or 120 Gbit/s speed. Experimentally, 27-GHz bandwidth is demonstrated at 3.5 times of threshold. © 2015 OSA.

Language: English
Publisher: Optical Society of America
Year: 2015
Proceedings: Integrated Photonics Research, Silicon and Nanophotonics 2015
ISBN: 1557520003 and 9781557520005
Types: Conference paper
DOI: 10.1364/iprsn.2015.jt5a.2
ORCIDs: Mørk, Jesper , Semenova, Elizaveta and Chung, Il-Sug
Keywords

Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials Hardware and Architecture Light output Magnetic materials Optical materials Optical sensors Si-waveguide Ultra-short cavity Vertical cavity lasers

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