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Preprint article · Conference paper

Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect

In Proceedings of 2021 5th Ieee Electron Devices Technology and Manufacturing Conference — 2021, pp. 1-3

By Wu, Xiaohan1; Ge, Ruijing1; Gu, Yuqian1; Okogbue, Emmanuel2; Shi, Jianping3; Shivayogimath, Abhay3; Boggild, Peter4,5,6; Booth, Timothy J.4,5,6; Zhang, Yanfeng3; Jung, Yeonwoong1; Lee, Jack C.1; Akinwande, Deji1 ...and 2 more

From

University of Texas at Austin1

University of Central Florida2

Peking University3

Department of Physics, Technical University of Denmark4

Nanomaterials and Devices, Department of Physics, Technical University of Denmark5

Center for Nanostructured Graphene, Centers, Technical University of Denmark6

Two-dimensional materials have been discovered to exhibit non-volatile resistive switching (NVRS) phenomenon. In our work, we reported the universal NVRS behavior in a dozen metal dichalcogenides, featuring low switching voltage, large on/off ratio, fast switching speed and forming free characteristics.

A unique conductive-point random access memory (CPRAM) effect is used to explain the switching mechanisms, supported by experimental results from current-sweep measurements.

Language: English
Publisher: IEEE
Year: 2021
Pages: 1-3
Proceedings: 5th IEEE Electron Devices Technology and Manufacturing Conference
ISBN: 1728181763 , 1728181771 , 9781728181769 and 9781728181776
Types: Preprint article and Conference paper
DOI: 10.1109/EDTM50988.2021.9420947
ORCIDs: Boggild, Peter and Booth, Timothy J.
Keywords

2D materials Atomic measurements Current measurement Metals Neuromorphic engineering Nonvolatile memory Radio frequency Random access memory cond-mat.mes-hall cond-mat.mtrl-sci non-volatile memory resistive switching

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