Journal article
On the Enhanced Phosphorus Doping of Nanotextured Black Silicon
The integration of nanotextured black silicon (B-Si) into solar cells is often complicated by its enhanced phosphorus doping effect, which is typically attributed to increased surface area. In this article, we show that B-Si's surface-to-volume ratio, or specific surface area (SSA), which is directly related to surface reactivity, is a better indicator of reduced sheet resistance.
We investigate six B-Si conditions with varying dimensions based on two morphology types prepared using metal-catalyzed chemical etching and reactive-ion etching. We demonstrate that for a POCl$_{3}$ diffusion, B-Si sheet resistance decreases with increasing SSA, regardless of surface area. 2-D dopant contrast imaging of different textures with similar surface areas also indicates that the extent of doping is enhanced with increasing SSA. 3-D diffusion simulations of nanocones show that both the extent of radial doping within a texture feature and the metallurgical junction depth in the underlying substrate increase with increasing SSA.
We suggest SSA should be considered more readily when studying B-Si and its integration into solar cells.
Language: | English |
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Publisher: | IEEE |
Year: | 2021 |
Pages: | 298-305 |
ISSN: | 21563403 and 21563381 |
Types: | Journal article |
DOI: | 10.1109/JPHOTOV.2020.3047420 |
ORCIDs: | Davidsen, Rasmus Schmidt , 0000-0003-2176-8863 , 0000-0002-7299-3481 , 0000-0003-0630-6687 , 0000-0002-2723-5286 and Hansen, Ole |