Journal article
InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer
Department of Photonics Engineering, Technical University of Denmark1
DTU Danchip, Technical University of Denmark2
Diode Lasers and LED Systems, Department of Photonics Engineering, Technical University of Denmark3
Department of Micro- and Nanotechnology, Technical University of Denmark4
Optofluidics, Department of Micro- and Nanotechnology, Technical University of Denmark5
Department of Energy Conversion and Storage, Technical University of Denmark6
Electrochemical Materials and Interfaces, Department of Energy Conversion and Storage, Technical University of Denmark7
Nanoprobes, Department of Micro- and Nanotechnology, Technical University of Denmark8
Center for Intelligent Drug Delivery and Sensing Using Microcontainers and Nanomechanics, Department of Health Technology, Technical University of Denmark9
Chinese Academy of Sciences10
...and 0 moreWe report an approach of using an interlayer of single layer graphene (SLG) for electroluminescence (EL) enhancement of an InGaN/GaN-based near-ultraviolet (NUV) light-emitting diode (LED) with an aluminum-doped zinc oxide (AZO)-based current spreading layer (CSL). AZO-based CSLs with and without a SLG interlayer were fabricated on the NUV LED epi-wafers.
The current-voltage (I-V) characteristic and the EL intensity were measured and compared. We find that the LED without the SLG interlayer can possess a 40% larger series resistance. Furthermore, a 95% EL enhancement was achieved by the employment of the SLG interlayer.
Language: | English |
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Year: | 2018 |
Pages: | 1818-1826 |
ISSN: | 21593930 |
Types: | Journal article |
DOI: | 10.1364/OME.8.001818 |
ORCIDs: | Ou, Yiyu , Zhu, Xiaolong , Stamate, Eugen , Wu, Kaiyu , Herstrøm, Berit , Boisen, Anja , Jensen, Flemming and Ou, Haiyan |