Journal article
Self-consistent modelling of resonant tunnelling structures
We report a comprehensive study of the effects of self-consistency on the I-V-characteristics of resonant tunnelling structures. The calculational method is based on a simultaneous solution of the effective-mass Schrödinger equation and the Poisson equation, and the current is evaluated with the Tsu-Esaki formula.
We consider the formation of the accumulation layer in the emitter contact layer in a number of different approximation schemes, and we introduce a novel way to account for the energy relaxation of continuum states to the two-dimensional quasi-bound states appearing for contain applied voltages and carrier densities at the emitter-barrier interface.
We include the two-dimensional accumulation layer charge and the quantum well charge in our self-consistent scheme. We discuss the evaluation of the current contribution originating from the two-dimensional accumulation layer charges, and our qualitative estimates seem consistent with recent experimental studies.
The intrinsic bistability of resonant tunnelling diodes is analyzed within several different approximation schemes.
Language: | English |
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Year: | 1992 |
Pages: | 392-395 |
ISSN: | 18792758 and 00396028 |
Types: | Journal article |
DOI: | 10.1016/0039-6028(92)91160-D |