Conference paper
A High Power Boost Converter for PV Systems Operating up to 300 kHz using SiC Devices
In this paper, a 3kW boost converter for PV applications using SiC devices is introduced. Main focus is to operate the converter over a wide range of switching frequency and to analyze the main loss distributors as well as the efficiency. The switching element is a recently introduced normally-on SiC JFET and a SiC diode is used.
The SiC JFET has been evaluated on an optimized double pulse test circuit showing switching energies four times lower than its Si IGBT competitor. Measurements show a maximum efficiency of 98.6% at 50 kHz. Thermal investigations show that the boost converter can be operated at full power for a switching frequency of 100 kHz using natural cooling.
At 200 kHz the boost converter is capable of operating at full power when forced air cooling is applied having a JFET case temperature of less than 90 C. The case temperature of the JFET increases up to 110 C at a switching frequency of 300 kHz where a maximum efficiency of 97.5% is achieved.
Language: | English |
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Publisher: | IEEE |
Year: | 2014 |
Pages: | 302-307 |
Proceedings: | 2014 IEEE International Power Electronics and Application Conference and Exposition |
ISBN: | 1479967688 , 1479967696 , 9781479967681 and 9781479967698 |
Types: | Conference paper |
DOI: | 10.1109/PEAC.2014.7037872 |
ORCIDs: | Anthon, Alexander , Zhang, Zhe and Andersen, Michael A. E. |